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Fraunhofer GaN Circuits PhD 2026: Paid Position in Freiburg
Fraunhofer IAF Paid PhD in GaN High-Power Circuits 2026
8 min read
Updated
NBy Naman Kumar
Page Summary⌄
Paid PhD: Salaried employment under the German TVöD public-sector agreement.
Research: GaN MMICs, high-power/high-frequency circuits, device optimization, thermal management and EM simulation.
Eligibility: Master’s or Diplom in Electrical Engineering, Microsystems Engineering, Communications Engineering or Physics.
Languages: Business-fluent German and English are required.
Deadline: No fixed application deadline is currently stated; the position was published on 12 October 2026.
Table of Contents
The Fraunhofer Institute for Applied Solid State Physics IAF in Freiburg is offering a paid doctoral position focused on GaN high-power and high-frequency integrated circuits.
During the PhD, you will design GaN-based MMICs using Fraunhofer IAF’s 100-V GaN HEMT technology, optimize semiconductor devices for operation at high voltages, investigate thermal-management concepts and improve electromagnetic simulation methods.
The position is salaried under Germany’s TVöD public-sector collective agreement, with a standard working time of 39 hours per week. The initial contract is for two years, and part-time employment is possible.
You need a Master’s or Diplom in Electrical Engineering, Microsystems Engineering, Communications Engineering, Physics or a closely related field, along with experience in circuit and electromagnetic simulation. The Fraunhofer Institute for Applied Solid State Physics IAF in Freiburg is offering a paid doctoral position focused on GaN high-power and high-frequency integrated circuits.
No fixed application deadline is currently stated in the official vacancy.
Fraunhofer IAF GaN PhD at a Glance
Information
Details
Position
PhD in GaN Circuits for Highest Power
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Institution
Fraunhofer Institute for Applied Solid State Physics IAF
Organization
Fraunhofer-Gesellschaft
Location
Freiburg, Germany
Field
Semiconductor / RF / power electronics
Position type
Paid doctoral employment
Employment
100%
Weekly hours
39 hours
Part-time
Possible
Initial contract
2 years
Salary
According to TVöD
Exact salary grade
Not stated
Degree required
Master’s or Diplom
German
Business-fluent
English
Business-fluent
Vacancy ID
84765
Application deadline
Not stated
Fraunhofer IAF develops semiconductor technologies, devices, circuits and modules across the semiconductor value chain, including high-frequency and power-electronics applications.
What is this Fraunhofer IAF PhD about?
The doctoral project focuses on developing next-generation GaN circuits for applications requiring very high power and high efficiency.
You will work with Fraunhofer IAF’s 100-V GaN HEMT technology to design integrated high-frequency circuits for applications such as:
- communication systems
- radar
- high-power RF electronics.
The target frequency range extends to approximately: 12 GHz
The research combines circuit design, semiconductor-device optimization, thermal management, electromagnetic modelling and experimental characterization.
What will you research during the PhD?
Your doctoral research will cover several closely connected topics.
GaN high-frequency circuit design
You will design integrated high-frequency circuits and MMICs based on Fraunhofer IAF’s GaN HEMT technology.
The aim is to achieve high output power and high efficiency for communication and radar applications.
Semiconductor-device optimization
You will investigate how GaN devices can be optimized for high-frequency performance at operating voltages of up to: 200 V
This includes understanding how device design affects RF performance, power handling and efficiency.
One part of the project therefore focuses on innovative thermal-management approaches such as:
diamond topside cooling.
The goal is to improve heat dissipation and enable higher-performance GaN devices.
Electromagnetic simulation
You will use electromagnetic field analysis to study the behaviour of GaN HEMTs and further develop Fraunhofer IAF’s simulation methods.
Which simulation tools should you know?
Fraunhofer expects you to be confident using circuit and electromagnetic simulation software.
The vacancy explicitly gives examples including:
- ADS
- CST
- HFSS.
You do not necessarily need experience with every listed package, but you should already understand circuit and EM simulation workflows.
Do I need semiconductor measurement experience?
Yes. The vacancy specifically asks for knowledge of measurement-based characterization of semiconductor devices.
Examples include:
- S-parameter measurements
- Load-Pull measurements.
This makes the position particularly suitable if your Master’s thesis or previous research involved RF devices, MMICs, semiconductor characterization or microwave measurements.
Who can apply?
You need a completed Master’s or Diplom in one of the following areas:
- Electrical Engineering
- Microsystems Engineering
- Communications Engineering
- Physics.
Your exact degree title does not necessarily have to match one of these names word for word, but your academic background should clearly fit semiconductor devices, RF electronics, circuits or a closely related area.
Can I apply with a Physics degree?
Yes. Physics is explicitly listed as an eligible academic background.
Your application will be stronger if your previous research involved areas such as:
- solid-state physics
- semiconductor physics
- microwave electronics
- electronic devices
- circuit simulation
- RF measurements.
Can I apply with a Microsystems Engineering degree?
Yes. Microsystems Engineering is explicitly listed among the accepted degree backgrounds.
You should highlight any experience related to semiconductor devices, circuit design, high-frequency electronics or device characterization.
Is this PhD paid?
Yes. This is a salaried doctoral employment position rather than a scholarship.
Fraunhofer states that:
- employment is based on the TVöD public-sector collective agreement
- social benefits follow the same framework
- additional performance- and success-related variable compensation may also be possible.
The vacancy does not state a specific TVöD pay group, so you should not assume a particular grade such as E13 unless Fraunhofer confirms it.
How much is the monthly salary?
The official vacancy does not publish an exact monthly or annual amount.
It only states that remuneration is based on: TVöD
Your actual gross salary therefore depends on the applicable classification and experience level.
Avoid using a calculated monthly salary in the article unless Fraunhofer publishes the precise pay group for this vacancy.
How long is the PhD contract?
The initial employment contract is: Two years
Fraunhofer explicitly describes the position as doctoral research, but the vacancy does not state the total expected length of the doctorate or explicitly guarantee an extension beyond those two years.
You should therefore clarify the expected doctoral timeline and any extension arrangements during the recruitment process.
Can I work part-time?
Yes. The standard working time is: 39 hours per week but Fraunhofer states that the position can also be filled on a part-time basis.
International applicants still need to meet the academic, technical and language requirements of the vacancy.
Do I need German for this Fraunhofer PhD?
Yes. The vacancy requires:
- business-fluent German
- business-fluent English.
This is therefore not an English-only doctoral position.
If you do not currently have strong professional German, you should not assume that excellent English alone will satisfy the requirement.
What skills does Fraunhofer expect?
Besides the academic and technical requirements, Fraunhofer expects you to demonstrate:
- teamwork
- strong communication
- independent scientific working ability.
The position involves moving from circuit design through simulation and fabrication to measurement and publication, so you should be comfortable working independently while collaborating with researchers across different areas.
Will I publish research during the PhD?
Yes. The official vacancy states that you will:
- conduct measurements
- analyse research results
- publish findings in recognised scientific journals
- present your work at international conferences.
This provides a clear academic-publication component alongside Fraunhofer’s applied industrial research.
What research environment will you join?
You will work in Fraunhofer IAF’s Microelectronics department in Freiburg.
Fraunhofer IAF conducts research across the semiconductor value chain and develops:
- semiconductor technologies
- electronic devices
- integrated circuits
- modules
- subsystems.
Its GaN research covers both high-frequency electronics and power electronics.
The institute’s high-frequency GaN portfolio includes MMIC development, device characterization, power measurements and GaN technologies extending into very high frequency ranges.
Why is GaN important for high-power circuits?
Gallium nitride, or GaN, is a wide-bandgap semiconductor that can support high-performance electronic devices.
Fraunhofer IAF develops GaN devices and circuits for applications where high efficiency, high power density and compact systems are important.
Its GaN capabilities include:
- high-frequency MMICs
- power amplifiers
- high-voltage devices
- integrated GaN power circuits
- semiconductor characterization.
For this doctoral position, the emphasis is specifically on combining high voltage with high-frequency performance.
What benefits does Fraunhofer offer?
The vacancy lists several employment and professional-development benefits.
These include:
- state-of-the-art research infrastructure
- interdisciplinary research opportunities
- applied projects with industry and public-sector partners
- freedom for independent research
- professional and personal training
- international conference participation
- VBL occupational pension
- subsidy for the Deutschland-Ticket or Jobticket
- health programmes
- family-friendly working arrangements
- mobile-work options
- free parking with EV charging
- nearby bike-sharing and public transport.
Fraunhofer also mentions the possibility of additional variable compensation linked to performance and success.
What documents do you need?
The official vacancy asks you to submit a substantive application through Fraunhofer’s online recruitment system.
However, it does not provide an exact document checklist on the publicly accessible vacancy page.
You should therefore not state that specific documents such as a motivation letter, transcript or references are mandatory unless they are requested during the online application process.
Prepare your standard academic application materials, but follow the portal instructions as the final requirement.
How to apply for the Fraunhofer IAF GaN PhD
Step 1 — Check your degree
You need a Master’s or Diplom in an eligible technical or scientific field.
Step 2 — Review your simulation experience
Make sure you can demonstrate experience with circuit and EM simulation.
Experience with tools such as ADS, CST or HFSS is particularly relevant.
